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Tuesday, 17 March 2020

Samsung 512GB eUFS 3.1 Storage Chip Announced for Next-Gen Smartphones, Brings 3x Faster Write Speeds

The new 512GB eUFS 3.1 storage chip claims to offer three times faster write speeds than the eUFS 3.0 chip, with a sequential write speed of over 1,200MBps.

from Meet Patel

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Infinix Note 40 Pro Reportedly Spotted on FCC; Could Feature 12GB RAM, 256GB Inbuilt Storage

Infinix Note 40 Pro has reportedly been listed on the US regulatory agency FCC. The listing suggets that the phone is likely to get 12GB RAM...